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Bias Field Modulation in Column Access Bubble Lattice Devices

IP.com Disclosure Number: IPCOM000085552D
Original Publication Date: 1976-Apr-01
Included in the Prior Art Database: 2005-Mar-02
Document File: 2 page(s) / 47K

Publishing Venue

IBM

Related People

Rosier, L: AUTHOR [+2]

Abstract

Column accessing of bubble domains in a bubble lattice includes a lattice translation operation and a column translation operation. The lattice translation operation involves the movement of bubbles horizontally using a relatively low-bias field, as shown in Fig. 1. The low-bias field for lattice translation is preferably of the order of 5 to 10 Oe. The column translation operation involves the movement of bubbles along the access column using a relatively high-bias field, as shown in Fig. 1. The high-bias field for the column translation operation is preferably of the order of 30 to 35 Oe.

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Bias Field Modulation in Column Access Bubble Lattice Devices

Column accessing of bubble domains in a bubble lattice includes a lattice translation operation and a column translation operation. The lattice translation operation involves the movement of bubbles horizontally using a relatively low- bias field, as shown in Fig. 1. The low-bias field for lattice translation is preferably of the order of 5 to 10 Oe. The column translation operation involves the movement of bubbles along the access column using a relatively high-bias field, as shown in Fig. 1. The high-bias field for the column translation operation is preferably of the order of 30 to 35 Oe.

In T and I bar bubble devices it is common practice to select a single bias field which is suitable for several of the operating functions. However, in the bubble lattice devices, a single bias field is not suitable for both the lattice translation operation and the column translation operation. One solution to this problem is to employ a low-bias field of the order of 5 to 10 Oe during the lattice translation operation, and then to increase the bias field to 30 to 35 Oe while the column translation operation is being performed.

This can be done by the apparatus shown in Fig. 2. A bubble domain chip 10 is positioned between two layers 12 and 14 of a high-permeability material, such as a permalloy material. A permanent magnet 16 is placed between layers 12 and 14 to provide the relatively low-bias field used for lat...