Dismiss
InnovationQ will be updated on Sunday, Oct. 22, from 10am ET - noon. You may experience brief service interruptions during that time.
Browse Prior Art Database

Ultrapurification of Flowing Gases

IP.com Disclosure Number: IPCOM000085668D
Original Publication Date: 1976-May-01
Included in the Prior Art Database: 2005-Mar-02
Document File: 2 page(s) / 31K

Publishing Venue

IBM

Related People

Bohg, A: AUTHOR [+2]

Abstract

In semiconductor technology, highly pure gases from which even trace impurities have been removed are required for various manufacturing steps.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 2

Ultrapurification of Flowing Gases

In semiconductor technology, highly pure gases from which even trace impurities have been removed are required for various manufacturing steps.

A suitable purification process consists in conducting the gas to be purifed across a hot surface of a highly pure material (solid).

At the selected temperature, the solid must have a high-diffusion speed with regard to the trace impurities to be removed from the gas.

A region of the solid which has a different temperature and/or a higher defect density than the hot surface trapping the impurities is used as a sink. Diffusion proceeds along the temperature gradient formed.

The figure shows a sectional view of an arrangement used to implement the process. Two plates 2 extending longitudinally and made of a silicon semiconductor material are arranged in a quartz tube 1. The two plates 2 divide the space of tube 1 into one inner space 3 and two outer spaces 4. The outside of the plates 2 are provided with ribs 5 to increase the area that comes into contact with the gas to be purified which is led through the two outer spaces 4.

Assuming an enrichment of the impurities on the hot side, the plates 2 are heated from the inner space 3 via a suitable heater arrangement 6. In this manner the necessary temperature gradient is obtained, along which the gas impurities diffuse into the interior of plates 2 via ribs 5.

1

Page 2 of 2

2

[This page contains 1 picture or other non-text object]