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Selective Etching of Sapphire

IP.com Disclosure Number: IPCOM000085740D
Original Publication Date: 1976-May-01
Included in the Prior Art Database: 2005-Mar-02
Document File: 2 page(s) / 44K

Publishing Venue

IBM

Related People

Rutz, RF: AUTHOR

Abstract

A method is shown for etching small grooves or holes in sapphire, utilizing a shaped form of solid carbon disposed on the surface of the sapphire substrate and having the desired pattern in the form of projections.

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Selective Etching of Sapphire

A method is shown for etching small grooves or holes in sapphire, utilizing a shaped form of solid carbon disposed on the surface of the sapphire substrate and having the desired pattern in the form of projections.

Referring to Fig. 1, there is shown an apparatus for carrying out the etching method. The apparatus generally designated as a high-temperature furnace 10 comprises a heat resistant enclosure 12 having a tungsten heater strip 14 attached to a power source 16. The enclosure 12 has an opening 18 for the entry of an ambient of inert gas and forming gas into the inside of the chamber and an exit 19 for withdrawing the gases. Preferably, the furnace ambient comprises about 80% Ar and about 15% H(2).

Resting on tungsten strip 14 is sapphire body 20, atop of which is a shaped solid carbon member 24. The solid body 20 which is maintained in place by gravity may be shaped with projections 21 by straightforward machining techniques.

The solid carbon 24 is shaped such that when the furnace is heated to a temperature of about 1800 degrees C, a grooved pattern 26 is obtained in the sapphire body 20 as shown in Fig. 2. At the temperature of 1800 degrees C the sapphire body is etched at a rate of approximately 1 mil/hr.

It can be understood that if the carbon projections 21 are allowed to etch through the sapphire body 20, it is possible to use the technique for the batch fabrication of arrays of nozzles in sapphire.

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