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Photoresist Pattern Preetch Dip

IP.com Disclosure Number: IPCOM000085774D
Original Publication Date: 1976-Jun-01
Included in the Prior Art Database: 2005-Mar-02
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Desorcie, DD: AUTHOR [+3]

Abstract

Where a surface such as a silicon semiconductor wafer is coated, for example, with a patterned film of AZ-1350* positive photoresist preparatory for etching with a solution such as hydrogen fluoride with nitric acid, the patterned workpiece is dipped into a solution of KMnO(4) and AZ developer. A mixture of 240 grams of KMnO(4) in 1 gallon of AZ developer was found appropriate. Dip time is approximately 90 seconds.

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Photoresist Pattern Preetch Dip

Where a surface such as a silicon semiconductor wafer is coated, for example, with a patterned film of AZ-1350* positive photoresist preparatory for etching with a solution such as hydrogen fluoride with nitric acid, the patterned workpiece is dipped into a solution of KMnO(4) and AZ developer. A mixture of 240 grams of KMnO(4) in 1 gallon of AZ developer was found appropriate. Dip time is approximately 90 seconds.

This procedure modifies the contact angle formed by the etchant with the coated surface and does not obstruct the etchant action. Any bubbles formed by the action of the etchant solution do not remain on the coated surface, but are displaced by the etchant solution. * Trademark of Shipley Company, Inc.

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