Browse Prior Art Database

In Phase Driver Circuit

IP.com Disclosure Number: IPCOM000085781D
Original Publication Date: 1976-Jun-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 2 page(s) / 32K

Publishing Venue

IBM

Related People

Arzubi, LM: AUTHOR

Abstract

This metal-oxide semiconductor field-effect transistor (MOSFET) in-phase driver circuit allows the use of smaller devices, and provides a fast output rise time with controlled delay between the rise of the START phase and the rise of the output pulse.

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In Phase Driver Circuit

This metal-oxide semiconductor field-effect transistor (MOSFET) in-phase driver circuit allows the use of smaller devices, and provides a fast output rise time with controlled delay between the rise of the START phase and the rise of the output pulse.

Initially precharge, or stop, pulse PC and Vout are high and input pulse START is low. Node E on the gate of transistor T9 is low and node A on the gate of transistor T5 and node B on the gate of transistor T7 are high. When PC rises, node D on the gate of transistor T4 is precharged causing bootstrap capacitor C1 to be charged. At the same time delay node C is precharged by transistors T7 and TS. Bootstrap capacitor C2 allows the source of T5, node C, to be driven to supply potential V charging delay capacitor CP. As node C charges transistor T3 quickly pulls the output Vout to ground, discharging node A at the same time as transistor T2 discharges node B.

When the input pulse START begins to rise, it is coupled through bootstrap capacitor C1 turning transistor T4 on and begins to charge node E. At the same time START is applied to transistor T1 and node C begins to discharge capacitor CP. When node E rises just beyond one threshold voltage (Vt), transistor T10 begins to discharge node D in order to turn off T4 and isolate the input node from the rest of the circuit. Node E also causes bootstrap capacitor C4 to charge.

The width-to-length (W/L) ratios of transistors T8, T2, T9 and T3 are des...