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Yield Improvement for Thin Si(3)N(4) Layers in Preemitter Passivation Layer Structures of NPN Transistors

IP.com Disclosure Number: IPCOM000085836D
Original Publication Date: 1976-Jun-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 2 page(s) / 38K

Publishing Venue

IBM

Related People

Beyer, KD: AUTHOR

Abstract

A considerable pipe (collector-emitter shorts) reduction for a NPN transistor is achieved by replacing a 1600 Angstroms thick silicon nitride, Si(3)N(4) layer in the preemitter passivation layer structure consisting of 800 Angstroms thermal SiO(2), 1600 Angstroms Si(3)N(4) and 1000 Angstroms pyrolytic SiO(2) by a 500 Angstroms thick Si(3)N(4) layer.

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Yield Improvement for Thin Si(3)N(4) Layers in Preemitter Passivation Layer Structures of NPN Transistors

A considerable pipe (collector-emitter shorts) reduction for a NPN transistor is achieved by replacing a 1600 Angstroms thick silicon nitride, Si(3)N(4) layer in the preemitter passivation layer structure consisting of 800 Angstroms thermal SiO(2), 1600 Angstroms Si(3)N(4) and 1000 Angstroms pyrolytic SiO(2) by a 500 Angstroms thick Si(3)N(4) layer.

The drawing shows a cross section of a simple NPN transistor consisting of the subcollector 1, the epitaxial layer 2, the base 3, the emitter 4, the 800 Angstroms thermal SiO(2) layer 5, the 1600 Angstroms Si(3)N(4) layer 6, the 1000 angstroms pyrolytic SiO layer 7 and the contact openings for the emitter 8, for the base 9, and for the collector 10. By replacing the 1600 angstroms thick Si(3)N(4) layer 6 by a 500 angstroms Si(3)N(4) layer, a pipe (collector-emitter shorts) yield improvement of the NPN transistor is observed.

It can be assumed that the pipe yield improvement of passivation layer structures containing a 500 angstroms Si(3)N(4) layer over the ones containing a 1600 angstroms Si(3)N(4) layer, is due to a stress reduction for the passivation layer structure containing the 500 angstroms Si(3)N(4) layer in comparison to the one containing the 1600 angstroms Si(3)N(4) layer.

In addition, a thin Si(3)N(4) layer in the preemitter passivation layer structure is advantageous for the emitter implantation proce...