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Fabrication of Si Schottky Barrier Diodes by RF Biased Sputtering

IP.com Disclosure Number: IPCOM000085933D
Original Publication Date: 1976-Jun-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 2 page(s) / 42K

Publishing Venue

IBM

Related People

Ho, PS: AUTHOR [+3]

Abstract

A procedure is described herein for fabricating near ideal Schottky barrier diodes on n-type silicon. Devices have been fabricated by this method and were found to exhibit good V-I characteristics, as illustrated by test results presented hereinafter.

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Fabrication of Si Schottky Barrier Diodes by RF Biased Sputtering

A procedure is described herein for fabricating near ideal Schottky barrier diodes on n-type silicon. Devices have been fabricated by this method and were found to exhibit good V-I characteristics, as illustrated by test results presented hereinafter.

The method consists of a two-step process which utilizes radio-frequency bias sputtering to form a metal/semiconductor junction. The first step involves sputter cleaning of the existing oxide barrier or whatever residues are left from photoprocessing on the surface of the semiconductor wafer. The metal is then sputtered onto the wafer under a bias direct voltage.

The first step is utilized because surface oxide and impurities are known to be responsible for most of the nonideal characteristics of metal-silicon contacts. The second step utilizes the intermixing of the target and substrate during RF biased sputtering, to form an intimate interfacial junction. The combinations of the gas pressure, bias voltage, RF power and substrate temperature are optimized, in order to obtain the proper interfacial mixing.

An exemplary Schottky barrier diode was fabricated on 1 ohm-cm Si wafers covered by 1000 Angstroms thermally grown SiO(2) layers containing photoetched test patterns. The sputtering was carried out in an Ar atmosphere of 5mu pressure with 500 watts RF power (cathode voltage 2300 volts) and -100 volts bias. The substrate was water-cooled and Ga backi...