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Dry Development of Photoresists

IP.com Disclosure Number: IPCOM000085937D
Original Publication Date: 1976-Jun-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Feder, R: AUTHOR [+4]

Abstract

A procedure is provided for developing an exposed resist using a dry rather than a wet process.

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Dry Development of Photoresists

A procedure is provided for developing an exposed resist using a dry rather than a wet process.

In most procedures wherein a resist made of polymeric materials is exposed, through a mask, to radiant energy, the exposed portions (where a positive resist is used) are removed by a wet solvent. In this procedure, methacrylate-type polymers can not only be exposed to short ultra-violet light, but the use of such short wavelength light in the presence of certain gases volatilizes the developed resist so that the developed resist is etched away, avoiding the need of a wet solution to dissolve the developed resist.

If, after the methacrylate-type polymer has been exposed, ultra-violet light whose wavelength is less than 2000 Angstroms is applied to the exposed polymer in the presence of any of the following gases, namely, argon, helium, nitrogen or air, the latter being at a temperature not exceeding 40 degrees C, a one-micron thick resist is removed after 1 hour of UV exposure.

It is not clear why the resist is removed by the combination of <2000 Angstroms and a gas, but it is believed that the removal process is akin to ion milling, wherein the gas is ionized by the UV and the ions etch away the developed resist.

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