Browse Prior Art Database

Silicon Nitride Protection for Magnetic Heads

IP.com Disclosure Number: IPCOM000085951D
Original Publication Date: 1976-Jun-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

d'Heurle, F: AUTHOR [+2]

Abstract

This technology reduces exposure to both corrosion and wear of miniaturized magnetic heads.

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Silicon Nitride Protection for Magnetic Heads

This technology reduces exposure to both corrosion and wear of miniaturized magnetic heads.

Silicon nitride has been shown to be an excellent diffusion barrier in silicon technology at temperatures up to 1000 degrees C range, even in very thin layers < 1000 Angstroms. It will efficiently protect the delicate elements of batch fabricated magnetic heads against exposure to deleterious atmospheric elements at normal use temperature.

Wear of such elements, e.g., copper conductors, due to friction between head and tape or disk, is also a source of concern. Because of its very high hardness, silicon nitride offers excellent protection against such wear.

Silicon nitride may be deposited over the whole head assembly, or the bottom part of it, by radio frequency reactive sputtering. If the assembly can withstand sufficiently high temperatures, it may be deposited by vapor (chemical) deposition techniques, in layers of ~ 200 Angstroms to 5000 Angstroms thickness.

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