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Small Diameter Opening Nozzles Formed by Ion Implantation

IP.com Disclosure Number: IPCOM000086020D
Original Publication Date: 1976-Jul-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Bogardus, EH: AUTHOR [+3]

Abstract

In many nozzle-type metering structures for apparatus requiring the feed-through of fluid through openings having diameters in the order of 25 micrometers or less, e.g., magnetic and electrostatic ink jet processes, techniques have been developed to form such small diameter openings in silicon wafers utilizing conventional photolithographic etching techniques.

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Small Diameter Opening Nozzles Formed by Ion Implantation

In many nozzle-type metering structures for apparatus requiring the feed- through of fluid through openings having diameters in the order of 25 micrometers or less, e.g., magnetic and electrostatic ink jet processes, techniques have been developed to form such small diameter openings in silicon wafers utilizing conventional photolithographic etching techniques.

In the formation of such openings, one problem which can present itself is that of cracks or fissures in the crystallographic silicon emanating from the edges of these minute openings back into the silicon.

It has been found that by subjecting the silicon to ion bombardment, a "hardening" effect takes place whereby the incidence of such cracks or fissures is minimized.

This hardening may be achieved by subjecting the monocrystalline silicon wafer to an ion bombardment or implantation with a material such as arsenic, for example, at an implantation energy of 50 KeV, and a dosage of 1 x 10/16/ cm/-2/. Alternatively, for the ion implantational bombardment, lighter ions such as boron, nitrogen, oxygen, silicon, carbon, neon, or argon may be used at implantation energies in the order of 200 KeV or above. In general, the ion dosage should exceed 1 x 10/14/ cm/-2/.

Most advantageously, the ion implantational bombardment is carried out as the final step in the processing sequence, i.e., after the openings have been formed. However, the ion bombardment or im...