Browse Prior Art Database

Integrated Circuit Chip Cooling

IP.com Disclosure Number: IPCOM000086023D
Original Publication Date: 1976-Jul-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 2 page(s) / 59K

Publishing Venue

IBM

Related People

Pearson, JB: AUTHOR

Abstract

It is known that by increasing the surface area on the back side of a silicon integrated circuit chip, it is possible to greatly enhance the cooling capacity of the chip and thus remove the heat generated by the operation of the circuit. As devices become smaller and more dense, this cooling problem becomes more critical and requires forced fluid convection, e.g., air, gas or cooling fluid.

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Integrated Circuit Chip Cooling

It is known that by increasing the surface area on the back side of a silicon integrated circuit chip, it is possible to greatly enhance the cooling capacity of the chip and thus remove the heat generated by the operation of the circuit. As devices become smaller and more dense, this cooling problem becomes more critical and requires forced fluid convection, e.g., air, gas or cooling fluid.

The "porous" technology is used to provide the increased surface area directly on the back surface of the integrated wafer. Possible configurations would be to provide channels as shown in Fig. 1 or islands as shown in Fig. 2 on the back side of the wafer. It is possible to make specific regions of the wafer pair porous by use, for example, of the technique described in U. S. patent 3,640,806. The size of the porous region may be controlled by a combination of dopant concentration, masking limits, current, voltage and time. It is, thus, possible to form cooling channels by the following specific process. A. Select regions to be made into channels. B. Selectively diffuse or implant to form regions to provide P+ conductivity. (Size limited only by the limits of the photo-lithographic state of the art.) If the substrate is P+ already, it is only necessary to mask the unselected regions. (Fig. 3.) If desired, the porous regions could be tailored to different configurations by variations in the P+ concentrations. This is not possible by anisotropic e...