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Browse Prior Art Database

Writing Scheme for a CCD Random Access Memory Array

IP.com Disclosure Number: IPCOM000086054D
Original Publication Date: 1976-Jul-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 2 page(s) / 52K

Publishing Venue

IBM

Related People

Dockerty, RC: AUTHOR

Abstract

This charge-coupled device (CCD), random-access memory, cell which uses a buried diffusion to write into the cell is shown in Fig. 1. The cell is written into by forward biasing the N+P junction, causing electrons to be injected into the depletion region under V(g). The N+ diffusion buried region must be contacted at the perimeter of the array by a reach-through diffusion, not shown.

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Writing Scheme for a CCD Random Access Memory Array

This charge-coupled device (CCD), random-access memory, cell which uses a buried diffusion to write into the cell is shown in Fig. 1. The cell is written into by forward biasing the N+P junction, causing electrons to be injected into the depletion region under V(g). The N+ diffusion buried region must be contacted at the perimeter of the array by a reach-through diffusion, not shown.

A different cell where an N substrate is used and no reach-through diffusion is required to contact the N+ diffusion is shown in Fig. 2. To write into the Fig. 2 cell, i.e., inject electrons, V(g) is raised to a high positive bias causing the depletion region to touch the N+ diffusion. This forward biases the N+P junction and electrons are injected into the depletion region under V(g). '

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