Browse Prior Art Database

Lift Off Glass Process for Metallization

IP.com Disclosure Number: IPCOM000086062D
Original Publication Date: 1976-Jul-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 2 page(s) / 43K

Publishing Venue

IBM

Related People

Agnihotri, RK: AUTHOR [+2]

Abstract

A quick lift-off process has been developed with use of Amoco's AI-10 polyamide-imide polymer in conjunction with Shipley's AZ-1350J resist and a glass barrier.

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Lift Off Glass Process for Metallization

A quick lift-off process has been developed with use of Amoco's AI-10 polyamide-imide polymer in conjunction with Shipley's AZ-1350J resist and a glass barrier.

As shown in Fig. 1, a 2200 angstrom layer 1 was coated on a silicon wafer 2, from a solution in N-methyl pyrrolidone with baking at 160 degrees C for five minutes. The polymer was then overcoated with a 13,500 angstrom layer 3 of the AZ-1350J positive resist with baking at 210 degrees C for 30 minutes.

In the next operation, the resist was coated with a 150O angstrom layer 4 of Dow Corning's 650 polysilicate glass and baked for 15 minutes at 210 degrees C. A second 4400 angstrom layer 5 of the AI-10 polyamide-imide was coated on top of the glass, and baked at 160 degrees C for five minutes.

A final 15,300 angstrom coat 6 of the AZ-1350J resist was applied over the polymer, baked, subjected to standard optical exposure at 7, and developed in accordance with conventional techniques.

The bared polyamide-imide was developed, or etched, in ethylenediamine for one minute, followed by removal of the underlying glass by reverse ion etching (in carbon tetrafluoride, for about 2.5 minutes). The remaining layers of resist and polymer, 3 and 1 respectively, were removed by reverse ion etching (O(2) for 10 minutes), to define the conductor opening.

The conductor pattern 8 was then applied by conventional metallization of aluminum-copper alloy of about 8500 angstrom thickness. I...