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Enhanced Wall State Stability Through Use of In Plane Field

IP.com Disclosure Number: IPCOM000086144D
Original Publication Date: 1976-Jul-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 2 page(s) / 40K

Publishing Venue

IBM

Related People

Beaulieu, TJ: AUTHOR [+2]

Abstract

The orientation of an in-plane field has a pronounced effect on the stability of S=1 and S=0 bubbles. The optimum orientation of the in-plane field is perpendicular (90 degrees) to the drive gradient. The maximum stability for the S=0 bubble is at 90 degrees, whereas the maximum stability for the S=1 bubble is in the range of 45 degrees to 80 degrees.

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Enhanced Wall State Stability Through Use of In Plane Field

The orientation of an in-plane field has a pronounced effect on the stability of S=1 and S=0 bubbles. The optimum orientation of the in-plane field is perpendicular (90 degrees) to the drive gradient. The maximum stability for the S=0 bubble is at 90 degrees, whereas the maximum stability for the S=1 bubble is in the range of 45 degrees to 80 degrees.

The following data shows the effect of orientation of a 40 Oe in-plane field on wall state stability. A Eu(0.65)Y(2.35)Fe(3.8)Ga(1.2)O(12)chip having a bias of 60 Oe and a nominal drive across the bubble of DeltaH=2 Oe was used.

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