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Uncontaminated Growth of Gallium Aluminum Arsenide DH Wafers

IP.com Disclosure Number: IPCOM000086156D
Original Publication Date: 1976-Jul-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Small, MB: AUTHOR [+2]

Abstract

In the conventional growth of double-heterojunction (DH) gallium aluminum arsenide wafers, gallium melt contained in a square-shaped graphite well is pushed onto a substrate for epitaxial growth thereon. The surface of the gallium solution always contains contaminant particles believed to be alumina.

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Uncontaminated Growth of Gallium Aluminum Arsenide DH Wafers

In the conventional growth of double-heterojunction (DH) gallium aluminum arsenide wafers, gallium melt contained in a square-shaped graphite well is pushed onto a substrate for epitaxial growth thereon. The surface of the gallium solution always contains contaminant particles believed to be alumina.

When the solution moves across the surface of a wafer, either at the beginning or the end of growth, it does so with an irregular "stick-slip" action. As it does so the contaminant particles on the free surface can be shaken off onto the substrate, thereby contaminating the growth. The free surfaces normally occur in the corners of the solution wells where the curvature of the solution is not as great as that of the well.

The problem of contaminant particles being shaken off the free surface can be solved by the use of a circular melt opening, instead of a square opening which does not present the same wetting problems. With the round melt opening, only the clean circular surface of the melt is presented to the substrate, thus avoiding the rolling in of scum and other contaminant particles.

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