Browse Prior Art Database

Optical Accessed Nonvolatile Cross Point Memory

IP.com Disclosure Number: IPCOM000086162D
Original Publication Date: 1976-Jul-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Yun, BH: AUTHOR

Abstract

In the IBM Technical Disclosure Bulletin article entitled "Nonvolatile Semiconductor Electrooptical Memory Device" by R.A. Kenyon and B.H. Yun, Vol. 15, No. 11, April 1973, pp.3455-6, a nonvolatile semiconductor electrooptical memory which is operated by a combination of electrical pulses and optical scanning, is shown. In the reference, reading is carried out by scanning the memory with a beam of light passed over a particular cell site.

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Optical Accessed Nonvolatile Cross Point Memory

In the IBM Technical Disclosure Bulletin article entitled "Nonvolatile Semiconductor Electrooptical Memory Device" by R.A. Kenyon and B.H. Yun, Vol. 15, No. 11, April 1973, pp.3455-6, a nonvolatile semiconductor electrooptical memory which is operated by a combination of electrical pulses and optical scanning, is shown. In the reference, reading is carried out by scanning the memory with a beam of light passed over a particular cell site.

In the present arrangement, the erase and writing steps are identical with that shown in the above-mentioned article. However, enhancement of the read signal can be achieved by pulsing bit sense lines with positive voltage pulses prior to the incidence of the optical read illumination. The amplitude of these positive voltage pulses should be approximately V(FB)(0), where the latter is the flat-band voltage of bits in the zero state. The output, V(o), is now given by: V(o) ~/- [V(FB) (0) + 0.6V] C(o)/C(A) ~/- 5V to 15V.

To achieve isolation between ce11 sites, it is suggested that a thick oxide of approximately 5000 Angstroms be interposed adjacent thin oxide cell sites.

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