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SiO(2) Insulation for Amorphous Bubble Films

IP.com Disclosure Number: IPCOM000086168D
Original Publication Date: 1976-Jul-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 2 page(s) / 34K

Publishing Venue

IBM

Related People

Ahn, KY: AUTHOR [+2]

Abstract

A method for depositing SiO(2) onto amorphous bubble material is described that improves the insulation properties of SiO(2) over GdCoMo.

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SiO(2) Insulation for Amorphous Bubble Films

A method for depositing SiO(2) onto amorphous bubble material is described that improves the insulation properties of SiO(2) over GdCoMo.

It is preferable to use a single bias for depositing SiO(2) over GdCoMo, but for such single bias sputtering of SiO(2) requires high temperatures (100-150 degrees C.) which GdCoMo cannot tolerate. Lower temperature deposition of single layers of SiO(2) do not yield reliable insulators compatible with GdCoMo. To obtain reliable SiO(2) over amorphous GdCoMo, a 3000 Angstrom thick layer of SiO(2) is deposited in three steps.

As seen in the sputtering chamber 2 of the figure, a substrate 4 of glass or silicon has a layer 6 of amorphous GdCoMo deposited therein. This last layer must be insulated from electrical conductors that are to apply magnetic fields to it. In the present instance SiO(2) is the insulating medium and it is sputtered onto the GdCoMo in three separate depositions. The first 500 Angstrom layer 8 of SiO(2) is deposited using a bias of -60 volts on the substrate. The target source 10 of SiO(2) is maintained at -700 volts.

A second layer 12 of SiO(2) is sputtered onto the first layer of SiO(2) with the substrate biased at 0 volts, or at ground potential. The final SiO(2) layer 14 is deposited at a substrate potential of -60 volts and is deposited to a thickness of 2000 Angstroms. Prior to beginning all SiO(2) sputtering depositions of SiO(2), the chamber is reduced to a nea...