Browse Prior Art Database

RF In Situ Sputter Cleaning Apparatus

IP.com Disclosure Number: IPCOM000086213D
Original Publication Date: 1976-Aug-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 2 page(s) / 35K

Publishing Venue

IBM

Related People

Cook, HC: AUTHOR [+3]

Abstract

The drawing illustrates an apparatus whereby semiconductor substrates are sputter cleaned by a structure which holds the substrates in a grounded dome, while allowing a capacitive coupling, at 13.56 RF MHz, through the substrates to establish a glow discharge. The resulting sputter cleaning of the substrates takes place within a single chamber, which is evacuated for the deposition of the desired metal following sputter cleaning.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 88% of the total text.

Page 1 of 2

RF In Situ Sputter Cleaning Apparatus

The drawing illustrates an apparatus whereby semiconductor substrates are sputter cleaned by a structure which holds the substrates in a grounded dome, while allowing a capacitive coupling, at 13.56 RF MHz, through the substrates to establish a glow discharge. The resulting sputter cleaning of the substrates takes place within a single chamber, which is evacuated for the deposition of the desired metal following sputter cleaning.

Referring to Fig. 1, RF power is fed via a coaxial feedthrough 6 to a stationary "hot plane" 1 in proximity to a substrate dome 4. The back side of the hot plane 1 is blanked from sputtering by a stationary ground plane 3. The grounded substrate dome 4 is raised to within close proximity of the hot plane 1. The silicon semiconductor substrates are held in machined quartz rings to provide isolation. These substrates are transparent to RF energy acting as an RF "window" in the grounded dome 4. Therefore, a discharge is supported in the region of the substrate surface.

Fig. 1 is a partial sectional schematic view of the apparatus with a vacuum source 10 and an inert gas bleed-in line 11. The RF source 8 matching network is shown in Fig. 2. Insulating supports 2 are beneath the upper ground plane 3, the substrate and holder is shown at 5 and the coaxial feedthrough 6 is connected to the hot plane 1. The dome 1 is rotated by any suitable means illustrated at 7 and the ground wiper is shown at 9.

The subst...