Browse Prior Art Database

Single Coat Photoresist Lift Off Structure

IP.com Disclosure Number: IPCOM000086235D
Original Publication Date: 1976-Aug-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Johnson, C: AUTHOR [+3]

Abstract

A developed positive resist layer having an overhang suitable for lift-off purposes is produced by pretreating the surface of the layer with an oxygen plasma.

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Single Coat Photoresist Lift Off Structure

A developed positive resist layer having an overhang suitable for lift-off purposes is produced by pretreating the surface of the layer with an oxygen plasma.

A photosensitive resist such as type AZ* 1350J is placed down on a substrate and then treated in an RF gas plasma oxidation apparatus. The treatment of the photoresist film in the plasma prior to exposure and development, produces a solubility in the film which varies as a function of depth,
i.e., the film is less soluble at the surface than below the surface.

After the treated film is exposed and developed in the usual manner, the photoresist remaining on the substrate is characterized with walls having the desired off-vertical slope providing overhanging edges. The material to be lifted off (aluminum, polysilicon, etc.) is then deposited at substrate temperatures not exceeding about 100 degrees C and the developed photoresist (and overlying material) is removed by suitable resist solvent. * Trademark of Shipley Company, Inc.

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