Browse Prior Art Database

Photoresist Process for Ion Implantation

IP.com Disclosure Number: IPCOM000086250D
Original Publication Date: 1976-Aug-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Rozich, WR: AUTHOR

Abstract

This process allows the use of BSA (N,O-bis-trimethyl silyl acetamide) as an adhesion promoter for ion implant resist of 29 ml LUPERSOL 101* per qt. of AZ 135O J**. This eliminates the need for introducing a second adhesion promoter. The process is as follows: 1. Static flood a semiconductor with 1% BSA in FREON*** TP and spin on. 2. Static apply AZ 1350 J/LUPERSOL 101 resist and spin on. 3. Bake. 4. Expose. 5. Develop with AZ developer for 30 seconds with no agitation. 6. Bake. * Trademark of Lucidol Division of the Pennsalt Chemicals Corp. ** Trademark of Shipley Company, Inc. ***Trademark of E. I. du Pont de Nemours & Co.

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Photoresist Process for Ion Implantation

This process allows the use of BSA (N,O-bis-trimethyl silyl acetamide) as an adhesion promoter for ion implant resist of 29 ml LUPERSOL 101* per qt. of AZ 135O J**. This eliminates the need for introducing a second adhesion promoter. The process is as follows: 1. Static flood a semiconductor with 1% BSA in FREON*** TP and spin on. 2. Static apply AZ 1350 J/LUPERSOL 101 resist and spin on. 3. Bake. 4. Expose. 5. Develop with AZ developer for 30 seconds with no agitation. 6. Bake. * Trademark of Lucidol Division of the Pennsalt Chemicals Corp. ** Trademark of Shipley Company, Inc. ***Trademark of E. I. du Pont de Nemours & Co.

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