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Etching Fine Patterns in Chromium and Refractory Metals

IP.com Disclosure Number: IPCOM000086252D
Original Publication Date: 1976-Aug-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Kluge, HC: AUTHOR [+3]

Abstract

This is a reactive ion etching method for making very fine patterns in chromium with a high degree of resolution, without residue, at a high-etch rate and at low RF power input.

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Etching Fine Patterns in Chromium and Refractory Metals

This is a reactive ion etching method for making very fine patterns in chromium with a high degree of resolution, without residue, at a high-etch rate and at low RF power input.

Because there is no undercutting of the mask during the etching process, the resolution is limited only by the lithographic process. An organic mask is suitable because only low RF power is required to achieve high-etch rates.

The Cr film is patterned with an organic mask using conventional lithographic techniques. The sample is placed on an SiO(2) target or other nonreactive material backed to an RF electrode within a vacuum chamber. After chamber evacuation, a mixture of CCl(4) and argon gases is admitted and a glow discharge is obtained by applying an RF potential to the electrode. Following are typical process parameters and resulting etch rates: CCl(4)/argon pressure : 4 microns/11 microns Sample temperature : 100 degrees C RF power :
0.2 - 0.3 watt/cm/2/ Cr etch rate : 250 Angstroms/min.

Ion etching in a CCl(4)/argon plasma is also useful for etching refractories such as Ta, Ti and W, and also composite layers of Al-Cu-Si-Ta, Al-Cu-Si-Cr, Al- Cu-Si-Ti-W and the like.

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