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Process for Removing Wafer Surface Contaminants

IP.com Disclosure Number: IPCOM000086253D
Original Publication Date: 1976-Aug-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Pak, MS: AUTHOR

Abstract

The article by Greer and Pak entitled "Process for Removing Wafer Surface Contaminants", IBM Technical Disclosure Bulletin, Vol. 15, No. 8, January 1973, pg. 2358, describes the use of "I Etch" for etching the surface of the wafers to remove contaminants.

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Process for Removing Wafer Surface Contaminants

The article by Greer and Pak entitled "Process for Removing Wafer Surface Contaminants", IBM Technical Disclosure Bulletin, Vol. 15, No. 8, January 1973, pg. 2358, describes the use of "I Etch" for etching the surface of the wafers to remove contaminants.

The process is substantially improved by applying heat to the wafers prior to removing the contaminants. The heat imparts sufficient mobility to high-diffusing contaminants like gold, copper, etc., to drive them to the surface regions where they are subsequently removed by the I Etch. To avoid imparting too much kinetic energy to the contaminants, the temperature should be held between 100 to 225 degrees C for between five to twenty minutes. An advantageous process is as follows: 1) Brush or felt clean the wafer. 2) Bake the wafers in an oven. 3) Etch the wafers in I Etch with a chelating agent. 4) Rinse, dry and oxidize.

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