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Elimination of Superheating in Liquid Encapsulated Semiconductor Modules

IP.com Disclosure Number: IPCOM000086275D
Original Publication Date: 1976-Aug-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Hornung, A: AUTHOR [+2]

Abstract

A method is provided for enhancing the onset of nucleate boiling, and for extending the nucleate boiling range of semiconductor devices in a liquid cooled package, by standard semiconductor processing applied to the back side of the wafer.

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Elimination of Superheating in Liquid Encapsulated Semiconductor Modules

A method is provided for enhancing the onset of nucleate boiling, and for extending the nucleate boiling range of semiconductor devices in a liquid cooled package, by standard semiconductor processing applied to the back side of the wafer.

The number of bubble sites on a chip is a random variable affected by surface material and finish. In some cases, the onset of boiling is delayed until some critical power density, leading to abnormally high-device temperatures.

In this method, the hack side of the device mounted on a substrate, preferably by solder bonding the chip to the substrate, is roughened thereby introducing boiling sites at the source of the heat, i.e., the device. This roughening operation and the resulting structure can be accomplished by (1) sandblasting the back side of the wafer, preferably prior to dicing the semiconductor wafer; (2) a etch of the back side of the device, or the wafer, prior to dicing: or (3) polishing only the device side of the wafer leaving the opposite back side rough in the condition after the wafer has been sliced.

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