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Deposition Process for Al(x)Ga(1-x)As

IP.com Disclosure Number: IPCOM000086369D
Original Publication Date: 1976-Aug-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 2 page(s) / 35K

Publishing Venue

IBM

Related People

Bachem, KH: AUTHOR

Abstract

This process depends upon the choice of source materials for formation of Al subhalides needed for deposition of Al(x)Ga(1-x)As. The process works without any Al source inside of a hot reactor. Therefore, difficulties related to the corrosive nature of Al at high temperatures are avoided. A schematic of the deposition system is shown in the figure.

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Deposition Process for Al(x)Ga(1-x)As

This process depends upon the choice of source materials for formation of Al subhalides needed for deposition of Al(x)Ga(1-x)As. The process works without any Al source inside of a hot reactor. Therefore, difficulties related to the corrosive nature of Al at high temperatures are avoided. A schematic of the deposition system is shown in the figure.

In the source region the following Al reduction reaction is the dominant one: CaAs + AlX(3) --> 2GaX + AlX + 1/2 As2. X represents Cl, Br, or I. An inert gas or H(2) can be used as a carrier gas.

Although the reaction of AlX(3) with GaAs results in the formation of a mixture of AlX and CaX, experiments show it is possible to deposit nearly pure AlAs. Composition of the deposit is controlled by the deposition temperature or by adding GaX, which is obtained in two ways: 1) introducing a mixture of AlX(3) and X(2) or HX instead of only AlX(3), or 2) using two sources separately fed with AlX(3) and X(2) or HX.

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