Browse Prior Art Database

Etch for Silicon (Na2 SiO3)

IP.com Disclosure Number: IPCOM000086392D
Original Publication Date: 1976-Sep-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Hammond, BR: AUTHOR [+2]

Abstract

Described is an etchant which can be used with silicon dioxide coated silicon to etch the underlying silicon at a considerable rate, while having minimal etching effect on the silicon dioxide.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 1

Etch for Silicon (Na2 SiO3)

Described is an etchant which can be used with silicon dioxide coated silicon to etch the underlying silicon at a considerable rate, while having minimal etching effect on the silicon dioxide.

The etchant utilized is sodium metasilicate and a product of the reaction of sodium hydroxide and silicon. This material is alkaline in nature with a PH of 12 and generally is used in a concentration of 1 mole per liter. This sodium metasilicate etchant solution has the desired properties of a diagnostic as well as a manufacturing tool, for it etches the silicon dioxide at a lower rate than sodium hydroxide and has a remarkable property of anisotropic etching of the silicon crystal

When applied to the oxidized silicon, it will readily reveal the discontinuities of the oxide by etching regular geometric figures in the underlying silicon. Thus the etchant is particularly useful as a quality control tool and as a manufacturing tool as well.

1