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Browse Prior Art Database

MNOS Reactor Process

IP.com Disclosure Number: IPCOM000086393D
Original Publication Date: 1976-Sep-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Haggett, JP: AUTHOR [+2]

Abstract

Described is an in situ process for sequentially forming an initial oxide, a gate oxide, silicon nitride overlayer and a polysilicon layer. This process is especially useful for fabricating charge-coupled device (CCD) or field-effect transistor (FET) type devices.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 68% of the total text.

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MNOS Reactor Process

Described is an in situ process for sequentially forming an initial oxide, a gate oxide, silicon nitride overlayer and a polysilicon layer. This process is especially useful for fabricating charge-coupled device (CCD) or field-effect transistor (FET) type devices.

The desired in situ process comprises a procedure in which a mixture of gases containing 1% to 2% hydrogen, 0.5% hydrochloric acid and the remainder hydrogen are admitted into a reactor, which contains a silicon wafer loaded on a silicon carbide coated susceptor. The temperature of the susceptor is then raised to an oxidization temperature greater than 1,000 degrees C and held at this temperature until an oxide of desired thickness is obtained, at which time the temperature is lowered to a silicon nitride deposition temperature to 700 degrees to 900 degrees C.

Once the lowered temperature has been achieved, the oxygen and hydrochloric acid flows are shut off and a flow of ammonia followed by a flow of silane gas in appropriate proportions are introduced into the chamber, which initiates the silicon nitride deposition. This silicon nitride deposition is allowed to continue until a nitride layer of the desired thickness is obtained.

Upon obtainment of the desired nitride thickness the ammonia flow is terminated and the silane regulated to the appropriate polycrystalline silicon deposition conditions. Once the appropriate thickness of polycrystalline silicon is grown, the silane flow i...