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Si Drive In Step for Al/Cu - Si Metallurgy

IP.com Disclosure Number: IPCOM000086447D
Original Publication Date: 1976-Sep-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Pressman, F: AUTHOR [+2]

Abstract

One type of metallurgy for semiconductor wiring patterns consists of vapor deposited Al/Cu-Si. The Si is a cap which is deposited following the Al/Cu deposition. The silicon must be diffused into the Al/Cu for successful subtractive etching of the land patterns. High-temperature diffusion produces coarse grain films.

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Si Drive In Step for Al/Cu - Si Metallurgy

One type of metallurgy for semiconductor wiring patterns consists of vapor deposited Al/Cu-Si. The Si is a cap which is deposited following the Al/Cu deposition. The silicon must be diffused into the Al/Cu for successful subtractive etching of the land patterns. High-temperature diffusion produces coarse grain films.

Finer grain films are produced by reducing the wafer temperature (100 degrees - 160 degrees C); however, this alone results in most of the silicon remaining on top of the Al/Cu film. A silicon drive-in after deposition in which fine grain films are sintered at 300 degrees C for 20 min. prior to subtractive etching diffuses the Si into the Al/Cu.

The process results in uniform etching as well as improved land definition and via hole quality.

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