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N+ Reverse Pocket Diffusion Structure for Second Breakdown Free Power Transistor Fabrication

IP.com Disclosure Number: IPCOM000086486D
Original Publication Date: 1976-Sep-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 2 page(s) / 29K

Publishing Venue

IBM

Related People

Oleszek, GM: AUTHOR [+4]

Abstract

The introduction of an avalanche diode having a breakdown voltage less than the second breakdown voltage of the intrinsic transistor to eliminate exposure to transistor reverse bias second breakdown is described in "Second Breakdown Free Switch Transistor" published in the IBM Technical Disclosure Bulletin, Vol. 19, No. 4, September 1976, pages 1308-1309.

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N+ Reverse Pocket Diffusion Structure for Second Breakdown Free Power Transistor Fabrication

The introduction of an avalanche diode having a breakdown voltage less than the second breakdown voltage of the intrinsic transistor to eliminate exposure to transistor reverse bias second breakdown is described in "Second Breakdown Free Switch Transistor" published in the IBM Technical Disclosure Bulletin, Vol. 19, No. 4, September 1976, pages 1308-1309.

Fig. 1 shows the equivalent circuit. An integrated silicon semiconductor structure, which incorporates the features of Fig. 1, and process steps for its manufacture are set forth in Fig. 2. The result is an N+ reverse pocket diffusion structure.

The starting wafer 10 is first prepared by diffusing "pockets" of N+ material on the backside of the wafer in the shape of and in alignment with the intended base contact area of the front side of the wafer. Subsequent processing, as shown, results in the desired diode structure 12 adjacent to the emitter perimeter.

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