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Adhesion of Photoresist on Substrate Surfaces

IP.com Disclosure Number: IPCOM000086548D
Original Publication Date: 1976-Sep-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Walter, W: AUTHOR

Abstract

Photolithographic work involving application of photoresist to certain surfaces like anodized niobium (Nb(2)O(5)) or silicon oxide (SiO or SiO(2)) is difficult because resist adhesion to the surface is insufficient, particularly if the surface had previously been exposed to etchants. The difficulty is even greater if the resist coating is required to be of a certain thickness, e.g., 2000 Angstroms and above, since resist will peel off during development or when strained metal or insulating layers are deposited on top.

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Adhesion of Photoresist on Substrate Surfaces

Photolithographic work involving application of photoresist to certain surfaces like anodized niobium (Nb(2)O(5)) or silicon oxide (SiO or SiO(2)) is difficult because resist adhesion to the surface is insufficient, particularly if the surface had previously been exposed to etchants. The difficulty is even greater if the resist coating is required to be of a certain thickness, e.g., 2000 Angstroms and above, since resist will peel off during development or when strained metal or insulating layers are deposited on top.

It was found that satisfactory resist adhesion is obtained when the substrate surface is subjected to an RF-glow discharge treatment.

Optimum results are obtained if an argon plasma of 6 . 10/-3/ torr pressure at 400 volt pp and a substrate temperature between 20 and 40 degrees C is maintained for about five minutes. Heavily strained metal layers up to about 3500 Angstroms have been deposited on surfaces treated that way. Resist and metal layer adhesion was found satisfactory.

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