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Complementary Inverter

IP.com Disclosure Number: IPCOM000086567D
Original Publication Date: 1976-Sep-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 2 page(s) / 20K

Publishing Venue

IBM

Related People

Fang, FF: AUTHOR [+2]

Abstract

A superconducting field-effect transistor (SFET), described on pages 1461-1462 of this issue utilizes an electric field to cause an imbalance in the electron density.

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Complementary Inverter

A superconducting field-effect transistor (SFET), described on pages 1461- 1462 of this issue utilizes an electric field to cause an imbalance in the electron density.

The structure shown in the above drawing is a complementary inverter, which consists of two SFETs, one in which T(c) increases with a positive bias and one in which T(c) decreases with the same bias. With a supply source of V and logic inputs of O or V, outputs are achieved of V or O, respectively, in a logic operation. Additional electric field controlled superconducting applications can be devised. For example, the channel can be a Josephson weak link or a tunnel junction in which one electrode is affected by the field and electric field control of the Josephson effect will be possible.

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