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Hot Electron Monitor

IP.com Disclosure Number: IPCOM000086644D
Original Publication Date: 1976-Oct-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 2 page(s) / 23K

Publishing Venue

IBM

Related People

Auriemma, AH: AUTHOR [+2]

Abstract

This sequence of testing and evaluation steps determines that a planar semiconductor does not have a serious reliability problem caused by the injection of electrons into an overlying insulating oxide layer. This sequence is easily implemented, requires minimum manpower, quickly produces a readout for product control and is readily adaptable to a variety of conditions. Moreover, such a technique will be useful during the development phase of devices in determining the correct value of physical parameters to be applied.

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Hot Electron Monitor

This sequence of testing and evaluation steps determines that a planar semiconductor does not have a serious reliability problem caused by the injection of electrons into an overlying insulating oxide layer. This sequence is easily implemented, requires minimum manpower, quickly produces a readout for product control and is readily adaptable to a variety of conditions. Moreover, such a technique will be useful during the development phase of devices in determining the correct value of physical parameters to be applied.

The test steps for metal-oxide semiconductor (MOS) field-effect transistors (FETs) is described.

Initially an FET 10 (Fig. 1) under test has its threshold voltage measured at specified drain and substrate voltages. Once this threshold voltage has been determined the voltages at gate VG, drain VD and substrate VSS are set to the desired levels to turn the device on so that the source current A1 can be measured. The current limiting resistor R is utilized only to prevent a runaway breakdown due to avalanche.

Referring to Fig. 2, after the measurement of the source current under the above conditions, selected voltages at VX, VD1 and VG1 are applied to the source, drain and gate electrodes, respectively, of the device 10 so that the substrate current A2 can now be measured under the same relative voltage bias conditions as in the first test. With these two measured currents, a multiplication factor, which is equal to the ratio of the substrate current to the source current, can...