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Suppressor for Frequency Multiplier

IP.com Disclosure Number: IPCOM000086656D
Original Publication Date: 1976-Oct-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 2 page(s) / 28K

Publishing Venue

IBM

Related People

Clouser, PW: AUTHOR

Abstract

A capacitor 10 is shunted across the path of a PN-junction diode switch 11 of a microwave frequency multiplier (partially shown). Capacitor 10 controls, i.e., reduces, the back EMF of the YIG (yttrium indium garnet) filter 12 and suppresses the resultant spurious signal harmonics which would otherwise be present in the desired output frequency being applied to the load 13 The current-driver amplifier 14 controls the on/off cycle of switch 11.

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Suppressor for Frequency Multiplier

A capacitor 10 is shunted across the path of a PN-junction diode switch 11 of a microwave frequency multiplier (partially shown). Capacitor 10 controls, i.e., reduces, the back EMF of the YIG (yttrium indium garnet) filter 12 and suppresses the resultant spurious signal harmonics which would otherwise be present in the desired output frequency being applied to the load 13 The current- driver amplifier 14 controls the on/off cycle of switch 11.

Alternatively, a diode 15, shown in outline form, may be shunted across the multiplier diode path in lieu of capacitor 10. In another approach, a diode may be connected in back-to-back relationship across diode 11 in lieu of capacitor 10.

One can also select the doping characteristics of diode 11 to minimize the nonlinearity of its inherent reverse-bias capacitance with minimum effect on its forward-bias minority-carrier storage characteristic. In this manner, the inherent reverse-bias capacitance of diode 11 can be used in lieu of capacitor 10.

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