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Controlling the Temperature Coefficient of Resistance of Ion Implanted Resistors

IP.com Disclosure Number: IPCOM000086665D
Original Publication Date: 1976-Oct-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 2 page(s) / 56K

Publishing Venue

IBM

Related People

Barile, CA: AUTHOR [+2]

Abstract

The values of the temperature coefficient of resistance (TCR) of ion-implanted resistors having diffused contacts may be fabricated to exhibit positive, negative or zero values by controlling the length of the resistor and/or the size and method of fabricating the contact regions.

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Controlling the Temperature Coefficient of Resistance of Ion Implanted Resistors

The values of the temperature coefficient of resistance (TCR) of ion- implanted resistors having diffused contacts may be fabricated to exhibit positive, negative or zero values by controlling the length of the resistor and/or the size and method of fabricating the contact regions.

The design of ion-implanted resistors includes three basic terms for three separate parts of the total resistor shown in the figures: the body of the ion- implanted (I/I) resistor 104, the effect of diffused contacts 106 and 107, and an end correction for the spreading resistance and metallic contacts (not shown) formed in windows 112.

The I/I resistor exhibits temperature coefficents of resistance which are positive in the main body 104 of the resistor and negative at the ends where the diffused contact regions are made into the implanted body. Thus, the TCR of the resistor may be selected relatively independently of resistance value. The total TCR is a strong function of resistor length for low resistivity resistors. The technique is particularly well adapted to integrated circuit manufacturing where transistors, diodes, etc., are fabricated simultaneously with the resistors.

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