Browse Prior Art Database

Wafer Surface Cleaning

IP.com Disclosure Number: IPCOM000086797D
Original Publication Date: 1976-Oct-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Forster, T: AUTHOR [+2]

Abstract

With conventional integrated circuit manufacture, a problem resides in that the drying process after the last rinsing step could lead to ion residues or other contaminants. This applies to hot-air furnace drying as well as to dry blasting with filtered inert gases.

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Wafer Surface Cleaning

With conventional integrated circuit manufacture, a problem resides in that the drying process after the last rinsing step could lead to ion residues or other contaminants. This applies to hot-air furnace drying as well as to dry blasting with filtered inert gases.

It is now proposed that the wafer be covered with a film of solvent as thick as possible, and the wet wafer be put immediately into a centrifuge. Before it is allowed to begin drying, the wafer is subjected to high-spinning to remove the solvent film. Rotation at about 7000 RPM removes the liquid fast and residue- free. Any particles in suspension are washed away. It is important that the wafer surface not be allowed to dry when removing the wafer from the rinse before it is spun. Thus, pure nitrogen dry blasting is no longer necessary.

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