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Preservation of Resist Patterns During Ion Milling Processes

IP.com Disclosure Number: IPCOM000086804D
Original Publication Date: 1976-Oct-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Kane, SM: AUTHOR [+2]

Abstract

In the bubble domain technology, device structures are often made using resist patterns as a mask during dry-etch processes, such as ion milling. In this process, ions are incident on the device material (such as NiPe) through a mask comprising a patterned resist layer. The resist layer can be a conventional photoresist or an electron beam resist. During ion milling, the resist patterns degrade and the remaining resist is difficult to remove.

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Preservation of Resist Patterns During Ion Milling Processes

In the bubble domain technology, device structures are often made using resist patterns as a mask during dry-etch processes, such as ion milling. In this process, ions are incident on the device material (such as NiPe) through a mask comprising a patterned resist layer. The resist layer can be a conventional photoresist or an electron beam resist. During ion milling, the resist patterns degrade and the remaining resist is difficult to remove.

The degradation and difficulty in removing the resist appears to be due to polymerization of the resist by the ion bombardment. These problems can be solved by gallium backing the wafers to the substrate holder during ion milling, in order to increase the thermal contact during this milling. The resist patterns are preserved after, at least, 20 minutes of milling which corresponds to removal of about 0.5 microns of resist. The remaining photoresist can be easily removed in acetone, while the remaining electron beam resist (such as PMMA) can be removed in forming gas by plasma ashing. The remaining PMMA cannot be removed in regular solvent.

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