Browse Prior Art Database

Ion Implantation Method for Monitoring Dose and Energy

IP.com Disclosure Number: IPCOM000086847D
Original Publication Date: 1976-Nov-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 2 page(s) / 38K

Publishing Venue

IBM

Related People

Bradbee, G: AUTHOR [+2]

Abstract

This describes a simple monitoring method for determining the dose and energy of ions implanted into semiconductor wafers. This process will provide speedy information to the operator so that corrections in implantation dosage can be implemented. The ion-implantation method is monitored as follows.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 64% of the total text.

Page 1 of 2

Ion Implantation Method for Monitoring Dose and Energy

This describes a simple monitoring method for determining the dose and energy of ions implanted into semiconductor wafers. This process will provide speedy information to the operator so that corrections in implantation dosage can be implemented. The ion-implantation method is monitored as follows.

A semiconductor wafer with oxide on one half of its surface is implanted and annealed at approximately 900 degrees C for about 30 minutes. Subsequently, the oxide is removed and the sheet resistance of each half of the wafer is measured. Since the sheet resistance of a bare wafer could be due to many combinations of dose and energy, it is not possible to determine the specific values of dose and energy used during the implant by calculating the sheet resistance of a bare wafer alone.

However, because some oI the implanted ions will become lodged in the oxide which has been stripped away, the sheet resistance of the oxidized half of the wafer as a function of dose and energy is quite different from that obtained on the unoxidized half. The differences of the two measured sheet resistances therefore makes it possible to solve a set of simultaneous equations to determine the unique values of dose and energy that would provide the sheet resistances measured. The described method is applicable to a wide range of semiconductor implantation dosages. The figure depicts a set of the curves derived from the appropriate equat...