Browse Prior Art Database

High Performance Transistor

IP.com Disclosure Number: IPCOM000086884D
Original Publication Date: 1976-Nov-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 2 page(s) / 59K

Publishing Venue

IBM

Related People

Berndlmaier, E: AUTHOR [+4]

Abstract

High-performance transistors can be realized by reducing the base-region resistance. This can be accomplished by reducing the base-to-emitter contact space and utilizing the platinum silicide in the base contact as a low-resistance conducting surface.

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High Performance Transistor

High-performance transistors can be realized by reducing the base-region resistance. This can be accomplished by reducing the base-to-emitter contact space and utilizing the platinum silicide in the base contact as a low-resistance conducting surface.

The NPN transistor (Fig. 1) illustrates the concept of an ohmic contact of first- level metal-to-platinum silicide in the base contact. In this design there is complete coverage of the base contact without any consideration given to the platinum silicide as a conducting surface.

By decreasing the base-to-emitter contact space (Fig.2) and using the platinum silicide as a conducting surface, the base-region resistance is reduced.

The base-spreading resistance term is inversely related to the figure of merit that determines the characteristic of the transistor.

The figure of merit for transistors is the maximum frequency at which it is an active two-port device. This is the maximum frequency of oscillation and is given by fm = f(t) over 8 r(b), Cob where Cob = collector transition capacitance r(b), = base spreading resistance

f(t) = current-gain bandwidth frequency.

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