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Browse Prior Art Database

Variable Transition Device Transistor

IP.com Disclosure Number: IPCOM000086885D
Original Publication Date: 1976-Nov-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 2 page(s) / 72K

Publishing Venue

IBM

Related People

Battista, MA: AUTHOR [+3]

Abstract

Described is a variable transition device transistor which includes these features: (1) personalized transition speeds, depending on the application, (2) an integrated structure which allows the resistors to be fabricated along with the transistor base region and (3) a compact design for high-density chip layouts.

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Variable Transition Device Transistor

Described is a variable transition device transistor which includes these features: (1) personalized transition speeds, depending on the application, (2) an integrated structure which allows the resistors to be fabricated along with the transistor base region and (3) a compact design for high-density chip layouts.

Fig. 1 shows the electrical schematic of the device described. Fig. 2 illustrates the topographic view of the important masking steps to fabricate the device, and Fig. 3 illustrates the vertical cross section of the device.

Resistors R1 through R6 are fabricated with the same masking and diffusion steps (base diffusion). Any combination of the six resistors can be selected during a given chip personalization to obtain the desired transistor speed needed for a particular application. Selection of these resistors is done by connecting the exposed silicon contacts with first-level metal.

Schottky barrier diodes (SBD) are also used at the ends of each resistor to clamp the collector-base regions to avoid transistor saturation. The emitter and collector contact regions are placed so the device is symmetrical for even current distribution.

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