Browse Prior Art Database

Polyimide as Masking Material for Ion Implantation

IP.com Disclosure Number: IPCOM000086900D
Original Publication Date: 1976-Nov-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Brack, K: AUTHOR [+2]

Abstract

A 0.1 - 10 mu thick polyimide layer is deposited on a substrate covered by a thin oxide layer. After selective etching the polyimide is used as a mask for ions with energies up to 1 MEV.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 1

Polyimide as Masking Material for Ion Implantation

A 0.1 - 10 mu thick polyimide layer is deposited on a substrate covered by a thin oxide layer. After selective etching the polyimide is used as a mask for ions with energies up to 1 MEV.

A layer of polyimide is spun on a substrate covered by a 500 Angstroms thick thermally grown oxide layer and subsequently prebaked. Then a layer of positive photoresist is applied, exposed to ultraviolet light, and then developed by an alkaline photoresist developer. The exposed areas of the photoresist layer and the underlying polyimide are removed in the same procedural step.

After the ion implantation the polyimide is stripped chemically, leaving the oxide layer unattacked.

1