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Modified Weinberger Chip Image for Random Logic With Double Level Metallization

IP.com Disclosure Number: IPCOM000086912D
Original Publication Date: 1976-Nov-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 2 page(s) / 59K

Publishing Venue

IBM

Related People

Puri, YK: AUTHOR

Abstract

A modified Weinberger layout is disclosed which allows the diffused line resistance to approach zero in such a manner as to allow the diffused line capacitance to be the minimum possible and the field-effect transistor (FET) gate sizes to depend on power and, insignificantly, on the diffused line resistance. This is accomplished by using a second layer of metallization to interconnect diffusions in the FET array.

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Modified Weinberger Chip Image for Random Logic With Double Level Metallization

A modified Weinberger layout is disclosed which allows the diffused line resistance to approach zero in such a manner as to allow the diffused line capacitance to be the minimum possible and the field-effect transistor (FET) gate sizes to depend on power and, insignificantly, on the diffused line resistance. This is accomplished by using a second layer of metallization to interconnect diffusions in the FET array.

The figure illustrates an example of an NOR circuit laid out in double metallization. It is apparent that the resistance of the source and drain of each FET device is reduced to the minimum possible allowed by the width of the gate and of the space occupied by the contact. The diffusion contacts for the source and drain of each device are oriented vertically to minimize the channel blockage. The resistance along the parallel connection of sources or the parallel connection of drains is substantially reduced by the use of the metallized interconnection on the second level. The total drain capacitance of the parallel array of FET devices is substantially reduced by eliminating the excess portions of the diffusions separated from the FET devices themselves.

It is important that the FET gate always be connected to first-level metallizations and not second level metallizations. It has been found that electrostatic charges which build up on the first-level metallizations during spu...