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Amorphous Dielectric Films of BaTiO(3) and Related Materials

IP.com Disclosure Number: IPCOM000086938D
Original Publication Date: 1976-Nov-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 2 page(s) / 41K

Publishing Venue

IBM

Related People

Marrello, V: AUTHOR [+2]

Abstract

Thin films of amorphous BaTiO(3) prepared by sputter deposition osses, highly suitable properties for use as an insulating dielectric. The high-dielectric figure of merit (product of dielectric breakdown field (V/cm) and dielectric constant) for these films is essentially equivalent to that of SiO(2) and Si(3)N(4), the commonly used dielectrics. See the table for a comparison.

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Amorphous Dielectric Films of BaTiO(3) and Related Materials

Thin films of amorphous BaTiO(3) prepared by sputter deposition osses, highly suitable properties for use as an insulating dielectric. The high-dielectric figure of merit (product of dielectric breakdown field (V/cm) and dielectric constant) for these films is essentially equivalent to that of SiO(2) and Si(3)N(4), the commonly used dielectrics. See the table for a comparison.

An important advantage of the amorphous BaTiO(3) films, however, is that they can be produced with a high figure of merit on room temperature substrates in an inert atmosphere. Elevated temperatures of up to 1100 degrees C and reactive atmospheres are required to obtain films of SiO(2) and Si(3)N(4) with a high figure of merit. Films of SiO(2) and Si(3)N(4) produced at lower temperatures yield lower figures of merit.

Potential applications of amorphous BaTiO(3) dielectric films are with materials or devices that are sensitive to elevated temperatures. Examples are devices utilizing amorphous materials in their active region or devices, which would be sensitive to diffusion of impurities at elevated dielectric deposition temperatures. A specific application is a bubble domain device having an amorphous BaTiO(3) layer separating the permalloy overlays and the conductors from an amorphous Gd-Co magnetic film.

It is expected, on the basis of strong similarities in the electronic and structural properties of BaTiO(3), SrTO(3) and TiO(2...