Browse Prior Art Database

Generation of Patterns in Polycrystalline Silicon Film by Laser Beams for Masking Applications

IP.com Disclosure Number: IPCOM000086952D
Original Publication Date: 1976-Nov-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 2 page(s) / 24K

Publishing Venue

IBM

Related People

Bassous, E: AUTHOR [+3]

Abstract

This is a technique for selective etching of recrystallized thin-film silicon for heat treated and melted laser written areas to form masks for subsequent etching. Lines and/or dots may be written in ~ 1 micron thick silicon or fused quartz substrates and etched in an anisotropic etching solution, for example, pyrocatechol, (30 gm pyrocatechol 170 cc ethylene diamine + 80 cc H(2)O), at 118 degrees C.

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Generation of Patterns in Polycrystalline Silicon Film by Laser Beams for Masking Applications

This is a technique for selective etching of recrystallized thin-film silicon for heat treated and melted laser written areas to form masks for subsequent etching. Lines and/or dots may be written in ~ 1 micron thick silicon or fused quartz substrates and etched in an anisotropic etching solution, for example, pyrocatechol, (30 gm pyrocatechol 170 cc ethylene diamine + 80 cc H(2)O), at 118 degrees C.

This technique of laser writing may be used to provide maskless definition of small holes in thin-film silicon which may be used as a mask for subsequent etching of the underlying substrate, such as for the formation of ink jet nozzles in closely spaced multiple arrays. The technique may also be used for information recording. Another use may be in providing the narrow spacing for source-drain separation in thin-film silicon transistors on insulating substrates, or where flat bottom depressions in amorphous or nearly amorphous silicon films are desired. Yet another use is to provide local masking for ion implantation where the remaining silicon film serves as a mask. After the selective etch step is performed, the remainder of the material may be processed as desired, oxidized, etc.

The advantage of this technique of masking over conventional photolithography is in structures as used for ink jet printers, such as charge electrodes, electrostatic synchronization structure, e...