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Nozzle Arrays in Mesa Structures Etched in Single Crystal Silicon

IP.com Disclosure Number: IPCOM000086955D
Original Publication Date: 1976-Nov-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 2 page(s) / 52K

Publishing Venue

IBM

Related People

Bassous, E: AUTHOR

Abstract

This mesa-type structure is useful in the fabrication of arrays of holes or orifices in single crystal silicon of (100) or (110) orientation which may be used as ink jet nozzles. Silicon nozzle fabrication techniques usually result in orifices appearing on the same surface or plane of the original silicon wafer. Where arrays are required at different levels relative to the original silicon surface mesa structures, these could readily be fabricated using anisotropic etching to form structures, as shown in Fig. 1. The geometry of these structures is dependent on the orientation of the single crystal wafer surface and the masking pattern which is etched therein.

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Nozzle Arrays in Mesa Structures Etched in Single Crystal Silicon

This mesa-type structure is useful in the fabrication of arrays of holes or orifices in single crystal silicon of (100) or (110) orientation which may be used as ink jet nozzles. Silicon nozzle fabrication techniques usually result in orifices appearing on the same surface or plane of the original silicon wafer. Where arrays are required at different levels relative to the original silicon surface mesa structures, these could readily be fabricated using anisotropic etching to form structures, as shown in Fig. 1. The geometry of these structures is dependent on the orientation of the single crystal wafer surface and the masking pattern which is etched therein.

The fabrication procedure is as follows: 1. Define a pattern on a masking film on the front side of the wafer and etch mesas in an anisotropic etching solution. 2. Reoxidize and define the nozzle array pattern, masking only those areas where orifices are required. 3. A p/+/ diffusion is then performed to any required depth, e.g., ~ 5mu m. 4. Define a pattern of windows on the back of the wafer and anisotropically etch the substrate through to the p/+/ silicon

membrane. 5. Strip and reoxidize.

Mesas of different shapes such as V-shaped or rectangular can be fabricated using identical procedures with the appropriately oriented silicon wafer. Fig. 1 illustrates the type of structure which can be fabricated.

In Fig. 1A a square mesa is anisotropic...