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High Density of Small Uniform Holes Etched Through a Thick Substrate of (110) Silicon

IP.com Disclosure Number: IPCOM000086956D
Original Publication Date: 1976-Nov-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 2 page(s) / 62K

Publishing Venue

IBM

Related People

Bassous, E: AUTHOR

Abstract

In Fig. 1 a silicon substrate 2 of (100) orientation has been anisotropically etched to form a cavity having the shape of a truncated square pyramid with four sloping side walls represented by the slow etching (111) planes. The sides of the cavity are parallel to the (110) direction. A pdoped membrane 4 is co-extensive with the cavity where the walls converge. An orifice 6 is etched in the membrane 4 by known etching techniques. This structure may be utilized as a single ink jet nozzle.

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High Density of Small Uniform Holes Etched Through a Thick Substrate of (110) Silicon

In Fig. 1 a silicon substrate 2 of (100) orientation has been anisotropically etched to form a cavity having the shape of a truncated square pyramid with four sloping side walls represented by the slow etching (111) planes. The sides of the cavity are parallel to the (110) direction. A pdoped membrane 4 is co-extensive with the cavity where the walls converge. An orifice 6 is etched in the membrane 4 by known etching techniques. This structure may be utilized as a single ink jet nozzle.

Fig. 2 illustrates a silicon substrate R which is rectangular in dimension. The substrate 8 is anisotropically etched resulting in a rectangular truncated pyramid having four sloping sides with n pdoped membrane 10 formed at the base, with a plurality of orifices 12 being etched in the membrane, such that the structure may be utilized as an ink jet nozzle array.

Fig. 3 illustrates a U-shaped silicon substrate 14 having a membrane 16 therein with a plurality of orifices 18 being etched in the membrane such that the device may be utilized as an ink jot nozzle array. Other geometric configurations, for example, L-shaped, may also be fabricated using the same technology.

Fig. 4 illustrates a single crystal of silicon 20 which is anisotropically etched to produce trenches 21, 23, 25 and 27 having perfectly vertical walls along two directions of the (110) face. Membranes 22, 24, 26 and 28 are co-extens...