Browse Prior Art Database

High Efficiency Ga(1-x)Al(x)As GaAs Solar Cells

IP.com Disclosure Number: IPCOM000086973D
Original Publication Date: 1976-Nov-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 2 page(s) / 22K

Publishing Venue

IBM

Related People

Hovel, HJ: AUTHOR [+2]

Abstract

Photon energy quantum efficiency can be improved and contact resistance reduced in a GaAlAs-GaAs solar cell by making electrical contact to the P-type GaAs. Anodic oxidation can be used to establish precise thickness of the GaAlAs layer and to impart anti-reflection properties.

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High Efficiency Ga(1-x)Al(x)As GaAs Solar Cells

Photon energy quantum efficiency can be improved and contact resistance reduced in a GaAlAs-GaAs solar cell by making electrical contact to the P-type GaAs. Anodic oxidation can be used to establish precise thickness of the GaAlAs layer and to impart anti-reflection properties.

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