Browse Prior Art Database

Low Reflection GaAs Surface

IP.com Disclosure Number: IPCOM000086974D
Original Publication Date: 1976-Nov-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Blakeslee, AE: AUTHOR [+2]

Abstract

Solar energy conversion in gallium arsenide can be improved by surface modification so that light striking a point on the surface is reflected to another part of the surface. The surface modification can be accomplished by the use of a crystallographic preferential etch operation which produces a mosaic of pyramidal members on the surface.

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Low Reflection GaAs Surface

Solar energy conversion in gallium arsenide can be improved by surface modification so that light striking a point on the surface is reflected to another part of the surface. The surface modification can be accomplished by the use of a crystallographic preferential etch operation which produces a mosaic of pyramidal members on the surface.

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