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Fabricating Open Ended Charge Electrodes for Ink Jet Printing

IP.com Disclosure Number: IPCOM000086983D
Original Publication Date: 1976-Nov-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 2 page(s) / 52K

Publishing Venue

IBM

Related People

Bassous, E: AUTHOR [+2]

Abstract

A charge electrode structure is fabricated in a (100) silicon substrate 2, as illustrated in Fig. 1. Fig. 2 is a cross-section of Fig. 1. The front face 4 of the silicon substrate 2 has a moat 6 etched around the perimeter thereof, to a predetermined depth, towards a back face B of the substrate. Control circuitry may be fabricated on the back face 8, with the substrate being mounted to a support structure (not shown) by way of the back face of the substrate. Trenches 10 are also etched in the front face 4 with slanted (111) sidewalls which are V-shaped or substantially U-shape in cross-section and which extend a selected amount, for example, half way, towards the back face 8 of the substrate 2. Each trench 10 is doped, as shown at 12, and thus serves as a charge tunnel.

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Fabricating Open Ended Charge Electrodes for Ink Jet Printing

A charge electrode structure is fabricated in a (100) silicon substrate 2, as illustrated in Fig. 1. Fig. 2 is a cross-section of Fig. 1. The front face 4 of the silicon substrate 2 has a moat 6 etched around the perimeter thereof, to a predetermined depth, towards a back face B of the substrate. Control circuitry may be fabricated on the back face 8, with the substrate being mounted to a support structure (not shown) by way of the back face of the substrate. Trenches 10 are also etched in the front face 4 with slanted (111) sidewalls which are V- shaped or substantially U-shape in cross-section and which extend a selected amount, for example, half way, towards the back face 8 of the substrate 2. Each trench 10 is doped, as shown at 12, and thus serves as a charge tunnel.

Opposite each trench on the back side of the wafer, cavities 14, which are pyramidal in shape, are etched, with the apex 16 of the pyramidal cavities 14 being adjusted to reach close to the bottom of the charge tunnel trench 10. The pyramidal cavities 14 are etched and diffused, as shown at 18 (Fig. 2), simultaneously with the charge tunnel trench 10. The diffused junction 20 of both the charge tunnel trenches 10 and the pyramidal cavities 14 merge. Thus, electrical contact to the respective charge tunnels can be made on the back face 8 of the wafer through the pyramidal cavities 14. Ink jet droplets are directed through the respectiv...