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Blind Hole Lithography on Si Nozzle and Si Charge Plates

IP.com Disclosure Number: IPCOM000086984D
Original Publication Date: 1976-Nov-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 2 page(s) / 36K

Publishing Venue

IBM

Related People

Lane, R: AUTHOR

Abstract

A problem in processing Si charge plates and Si nozzle plates is the inability to use photoresist after the holes, charge slots and nozzles have been etched through the substrate. The etched holes cause the resist to retreat from the area around the holes when spinning the resist, and they also cause build-up around the hole when spraying the resist. Because of these conditions photolithography is generally omitted from the processing steps after the holes have been etched.

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Blind Hole Lithography on Si Nozzle and Si Charge Plates

A problem in processing Si charge plates and Si nozzle plates is the inability to use photoresist after the holes, charge slots and nozzles have been etched through the substrate. The etched holes cause the resist to retreat from the area around the holes when spinning the resist, and they also cause build-up around the hole when spraying the resist. Because of these conditions photolithography is generally omitted from the processing steps after the holes have been etched.

A solution to this problem is to leave oxide or any other suitable film on the bottom of the etched hole, in effect making a blind hole. As shown in Fig. 1, a silicon substrate 2 has an oxide film 4 formed on the back side thereof, with a hole 6 etched therein from the front side to the oxide film 4. The back surface can be used for lithography, applying resist either by spinning or spraying.

The concept of the blind hole can be extended to multilayer packaging, where stacked substrates are used, and interlayer connections are made by via holes. During processing the via holes could be blind and lithography can be used on that surface.

In some processes, such as a process for forming a silicon charge plate, it may be necessary to use thin films as masks in conjunction with resist. For example, as shown in Fig. 2, a substrate 8 would have SiO(2) layers 10 and 12 on both faces, and then a Si(3)N(4) layer 14 would be placed on one face. Res...