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Fabricating Long Arrays of Nozzles in Large Diameter Wafers

IP.com Disclosure Number: IPCOM000086985D
Original Publication Date: 1976-Nov-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 2 page(s) / 86K

Publishing Venue

IBM

Related People

Bassous, E: AUTHOR [+2]

Abstract

Long arrays of closely spaced nozzles of uniform size are required for high-performance ink jet printers. The following is a process for fabricating such arrays by anisotropically etching (100) silicon and three levels of lithography.

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Fabricating Long Arrays of Nozzles in Large Diameter Wafers

Long arrays of closely spaced nozzles of uniform size are required for high- performance ink jet printers. The following is a process for fabricating such arrays by anisotropically etching (100) silicon and three levels of lithography.

As shown in Fig. 1A, a silicon wafer 2 has SiO(2) oxide coatings 4 and 6 applied to the front and back surfaces thereof, with a rectangular opening 8 being defined on the front surface by photolithography. Then, as illustrated in Fig. 1B, the wafer is anisotropically etched in the defined area 8 to form a rectangular trench 10 which is aligned parallel to the (110) direction. The trench is etched on to a flat bottom such that the thickness of the silicon at the bottom of the trench is approximately 5 mils thick for nozzles on 8 mil centers. The width of the trench is designed to be narrow enough (approximately 20 mils) to support the 5 mil thick membrane 11.

A second level of lithography is carried out, as illustrated in Fig. 1C, to define a base hole pattern in the bottom of the trench. The upper surface of the wafer and the trench are coated with an oxidized layer 12, with base hole patterns 14 being formed therein by means of lithography. For example, this step is best carried out by reactive ion etching lithography using a physical mask in order to avoid the problems associated with photoresist in defining patterns on 3- dimensional structures. Next, as shown in Fig. 1...