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Integrated Optoelectronic Display System

IP.com Disclosure Number: IPCOM000086996D
Original Publication Date: 1976-Nov-01
Included in the Prior Art Database: 2005-Mar-03
Document File: 2 page(s) / 41K

Publishing Venue

IBM

Related People

Fang, FF: AUTHOR [+2]

Abstract

This is a completely integrated display system which includes optoelectronics and electronic components formed on a single substrate. The fabrication process set forth below is described relative to a gallium arsenide (GaAs) substrate. However, other substrates such as GaP, GaP/silicon or the like may be employed once the appropriate technology is established. Basically, two separate GaAs and GaAs P epitaxial regions are formed on a semi-insulating GaAs substrate. The light-emitting diode (LED) part of the display system is fabricated on the GaAs(1-x) P(x) epitaxial region and the electronics are implemented on the GaAs epitaxial region by metal semiconductor field-effect transistor (MESFET) circuitry. The following steps may be utilized for the fabrication of such a display system:

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Integrated Optoelectronic Display System

This is a completely integrated display system which includes optoelectronics and electronic components formed on a single substrate. The fabrication process set forth below is described relative to a gallium arsenide (GaAs) substrate. However, other substrates such as GaP, GaP/silicon or the like may be employed once the appropriate technology is established. Basically, two separate GaAs and GaAs P epitaxial regions are formed on a semi-insulating GaAs substrate. The light-emitting diode (LED) part of the display system is fabricated on the GaAs(1-x) P(x) epitaxial region and the electronics are implemented on the GaAs epitaxial region by metal semiconductor field-effect transistor (MESFET) circuitry. The following steps may be utilized for the fabrication of such a display system:

(1) As shown in Fig. 1A, a semi-insulating GaAs substrate 2 has an epitaxial layer 4 of N-GaAs, on the order of a few microns, selectively grown thereon, with an insulating layer 6, such as SiO(2) or Si(3)N(4) deposited thereon, with a portion of the layers 4 and 6 subsequently being, respectively, removed by etching or the like to yield a configuration, as illustrated in Fig. 1B.

(2) Next, as illustrated in Fig. 1C, a ternary compound 8, such as GaAs(1-x) P(x) is grown. This results in an epitaxial layer of the compound on the substrate 2 and a polycrystalline compound layer on the insulator 6.

(3) Then, the insulating layer 6 along with the ternary compound 8 formed on the surface of layer 6 are stripped, yielding a con...